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IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
HIGH-PERFORMANCE CMOS BUFFER
IDT54/74FCT827A/B
* Faster than AMD's Am29827 series * Equivalent to AMD's Am29827bipolar buffers in pinout/function, speed, and output drive over full temperature and voltage supply extremes * IDT54/74FCT827A equivalent to FASTTM speed * IDT54FCT827B 35% faster than FAST * IOL = 48mA (commercial) and 32mA (military) * Clamp diodes on all inputs for ringing suppression * CMOS power levels (1mW typ. static) * TTL input and output level compatible * CMOS output level compatible * Substantially lower input current levels than AMD's bilopar Am29800 series (5A max.) * MIlitary product compliant to MIL-STD-883, Class B * Available in the following packages: - Commercial: SOIC - Military: CERDIP, LCC
FEATURES:
DESCRIPTION:
The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology. The IDT54/74FCT827 10-bit bus drivers provide high-performance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NAND-ed output enables for maximum control flexibility. All of the IDT54/74FCT800 high-performance interface family are designed for high-capacitance load drive capability, while providing lowcapacitance bus loading at both inputs and outputs. All inputs have clamp diodes and all outputs are designed for low-capacitance bus loading in highimpedance state.
FUNCTIONAL BLOCK DIAGRAM
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
Y
9
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
OE
1
OE
2
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
1
OCTOBER 2002
DSC-4612/5
(c) 2002 Integrated Device Technology, Inc.
IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATION
OE1
D1
D0
NC
Y0
2 7
OE1 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 GND
1 2 3 4 5 6 7 8 9 10 11 12
24 23 22 21 20 19 18 17 16 15 14 13
VCC Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8
4
3
2 1
D2 D3 D4 NC D5 D6 D7
5 6 7 8 9 10 11 12 1 3 1 4
2 8
2 6 25 24 23 22 21 20 19
Y1
INDEX
VCC
Y2 Y3 Y4 NC Y5 Y6 Y7
1 5
1 6
1 7
1 8
GND
NC
D8
D9
OE2
Y9
OE2
CERDIP/ SOIC TOP VIEW
LCC TOP VIEW
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM(2) VTERM(3) TA TBIAS TSTG PT IOUT Rating Terminal Voltage with Respect to GND Terminal Voltage with Respect to GND Operating Temperature Temperature under BIAS Storage Temperature Power Dissipation DC Output Current 0 to +70 -55 to +125 -55 to +125 0.5 120 -55 to +125 -65 to +135 -65 to +150 0.5 120 C C C W mA -0.5 to VCC -0.5 to VCC V Commercial -0.5 to +7 Military -0.5 to +7 Unit V
CAPACITANCE (TA = +25C, F = 1.0MHz)
Symbol CIN COUT Parameter(1) Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Typ. 6 8 Max. 10 12 Unit pF pF
NOTE: 1. This parameter is measured at characterization but not tested.
LOGIC SYMBOL
10 10
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed Vcc by +0.5V unless otherwise noted. 2. Input and Vcc terminals only. 3. Output and I/O terminals only.
D0-9
Y8
Y0-9
Y9
OE1 OE2
2
IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN DESCRIPTION
Pin Name OEx Dx Yx I/O I I O Description When both are LOW, the outputs are enabled. When either one or both are HIGH, the outputs are High Z. 10-bit data input 10-bit data output
FUNCTION TABLE(1)
Inputs OE1 L L H X OE2 L L X H Dx L H X X Outputs Yx L H Z Z 3-State Function Transparent
NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level X = Don't Care Z = High Impedance
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC - 0.2V Commercial: TA = 0C to +70C, VCC = 5.0V 5%, Military: TA = -55C to +125C, VCC = 5.0V 10%
Symbol VIH VIL IIH IIL IOZH IOZL VIK IOS VOH Off State (High Impedance) Output Current Clamp Diode Voltage Short Circuit Current Output HIGH Voltage VCC = Max. Parameter Input HIGH Level Input LOW Level Input HIGH Current VCC = Max. Input LOW Current Test Conditions(1) Guaranteed Logic HIGH Level Guaranteed Logic LOW Level VI = VCC VI = 2.7V VI = 0.5V VI = GND VO = VCC VO = 2.7V VO = 0.5V VO = GND GND(3) Min. 2 -- -- -- -- -- -- -- -- -- -- -75 VHC VHC 2.4 2.4 -- -- -- -- Typ.(2) -- -- -- -- -- -- -- -- -- -- -0.7 -120 VCC VCC 4.3 4.3 GND GND 0.3 0.3 Max. -- 0.8 5 5(4) -5(4) -5 10 10(4) -10(4) -10 -1.2 -- -- -- -- -- VLC VLC(4) 0.5 0.5 A A Unit V V
VCC = Min., IIN = -18mA VCC = Max., VO = VCC = 3V, VIN = VLC or VHC, IOH = -32A VCC = Min IOH = -300A VIN = VIH or VIL IOH = -15mA MIL IOH = -24mA COM'L VCC = 3V, VIN = VLC or VHC, IOL = 300A VCC = Min IOL = 300A VIN = VIH or VIL IOL = 32mA MIL IOL = 48mA COM'L
V mA V
VOL
Output LOW Voltage
V
NOTES: 1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25C ambient and maximum loading. 3. Not more than one output should be tested at one time. Duration of the test should not exceed one second. 4. This parameter is guaranteed but not ttested.
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IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
VLC = 0.2V; VHC = VCC - 0.2V
Symbol ICC ICC ICCD Parameter Quiescent Power Supply Current Quiescent Power Supply Current TTL Inputs HIGH Dynamic Power Supply Current(4) Test Conditions(1) VCC = Max. VIN VHC; VIN VLC VCC = Max. VIN = 3.4V(3) VCC = Max. Outputs Open OE1 = OE2 = GND LE = VCC One Input Toggling 50% Duty Cycle VCC = Max. Outputs Open fi = 10MHz 50% Duty Cycle OE1 = OE2 = GND LE = VCC One Bit Toggling VCC = Max. Outputs Open fi = 2.5MHz 50% Duty Cycle OE1 = OE2 = GND LE = VCC Eight Bits Toggling VIN VHC VIN VLC Min. -- -- -- Typ.(2) 0.2 0.5 0.15 Max. 1.5 2 0.25 Unit mA mA mA/ MHz
IC
Total Power Supply Current(6)
VIN VHC VIN VLC (FCT) VIN = 3.4V VIN = GND
--
1.7
4
mA
--
2
5
VIN VHC VIN VLC (FCT) VIN = 3.4V VIN = GND
--
3.2
6.5(5)
--
5.2
14.5(5)
NOTES: 1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.0V, +25C ambient. 3. Per TTL driven input (VIN = 3.4V). All other inputs at VCC or GND. 4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations. 5. Values for these conditions are examples of ICC formula. These limits are guaranteed but not tested. 6. IC = IQUIESCENT + IINPUTS + IDYNAMIC IC = ICC + ICC DHNT + ICCD (fCP/2 + fiNi) ICC = Quiescent Current ICC = Power Supply Current for a TTL High Input (VIN = 3.4V) DH = Duty Cycle for TTL Inputs High NT = Number of TTL Inputs at DH ICCD = Dynamic Current caused by an Input Transition Pair (HLH or LHL) fCP = Clock Frequency for register devices (zero for non-register devices) fi = Input Frequency Ni = Number of Inputs at fi All currents are in milliamps and all frequencies are in megahertz.
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IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
54/74FCT827A Com'l. Symbol tPLH tPHL Parameter Propagation Delay Dx to Yx Condition(1) CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 50pF RL = 500 CL = 300pF(3) RL = 500 CL = 5pF(3) RL = 500 CL = 50pF RL = 500 Min.(2) 1.5 1.5 1.5 1.5 1.5 1.5 Max. 8 15 12 23 9 10 Min.(2) 1.5 1.5 1.5 1.5 1.5 1.5 Mil. Max. 9 17 13 25 9 10 54FCT827B Mil. Min.(2) Max. 1.5 6.5 1.5 1.5 1.5 1.5 1.5 14 9 16 7 8 ns ns Unit ns
tPZH tPZL
Output Enable Time, OE to Yx
tPHZ tPLZ
Output Disable Time, OE to Yx
NOTES: 1. See test circuit and waveforms. 2. Minimum limits are guaranteed but not tested on Propagation Delays. 3. These parameters are guaranteed but not tested.
5
IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TEST CIRCUITS AND WAVEFORMS
V CC 500 VIN Pulse Generator RT D.U.T . VOUT 7.0V
SWITCH POSITION
Test Open Drain Disable Low Enable Low Switch Closed Open
50pF CL
500
All Other Tests
DEFINITIONS: CL = Load capacitance: includes jig and probe capacitance. RT = Termination resistance: should be equal to ZOUT of the Pulse Generator.
Octal link
Test Circuits for All Outputs
DATA INPUT TIMING INPUT ASYNCHRONOUS CONTROL PRESET CLEAR ETC. SYNCHRONOUS CONTROL PRESET CLEAR CLOCK ENABLE ETC.
tSU
tH
tREM
3V 1.5V 0V 3V 1.5V 0V 3V 1.5V 0V 3V 1.5V 0V
Octal link
LOW-HIGH-LOW PULSE tW HIGH-LOW-HIGH PULSE
Octal link
1.5V
1.5V
tSU
tH
Pulse Width
Set-Up, Hold, and Release Times
ENABLE SAME PHASE INPUT TRANSITION tPLH OUTPUT tPLH OPPOSITE PHASE INPUT TRANSITION tPHL tPHL 3V 1.5V 0V VOH 1.5V VOL 3V 1.5V 0V
Octal link
DISABLE 3V 1.5V 0V 3.5V 0.3V tPHZ 0.3V 1.5V 0V VOH 0V
Octal link
CONTROL INPUT tPZL OUTPUT NORMALLY LOW OUTPUT NORMALLY HIGH SWITCH CLOSED tPZH SWITCH OPEN 3.5V 1.5V tPLZ
VOL
Propagation Delay
Enable and Disable Times
NOTES: 1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH. 2. Pulse Generator for All Pulses: Rate 1.0MHz; ZO 50; tF 2.5ns; tR 2.5ns.
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IDT54/74FCT827A/B HIGH-PERFORMANCECMOSBUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ORDERING INFORMATION
XXXX FCT IDT XX Temp. Range Device Type XX Package X Process Blank B Commercial MIL-STD-883, Class B Commercial Options Small Outline IC Military Options CERDIP Leadless Chip Carrier
SO
D L
827A 827B
High Performance CMOS Buffer, 10-Bit
54 74
- 55C to +125C 0C to +70C
CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054
for SALES: 800-345-7015 or 408-727-6116 fax: 408-492-8674 www.idt.com
for Tech Support: logichelp@idt.com (408) 654-6459
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